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US Patent Issued to FABRIC8LABS on April 7 for "Embedding electronic devices using electrochemical additive manufacturing" (California Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,595,579, issued on April 7, was assigned to FABRIC8LABS INC. (San Diego). "Embedding electronic devices using electrochemical additive manufact... Read More


US Patent Issued to JFE Steel on April 7 for "Galvanized steel sheet" (Japanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,595,580, issued on April 7, was assigned to JFE Steel Corp. (Tokyo). "Galvanized steel sheet" was invented by Kazuaki Tsuchimoto (Tokyo), Kento... Read More


US Patent Issued to APPLIED Materials on April 7 for "Coplanarity improvement of high-rate CU pillar processes using high agitation to enable use of high acid, low CU chemistries" (Montana Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,595,581, issued on April 7, was assigned to APPLIED Materials Inc. (Santa Clara, Calif.). "Coplanarity improvement of high-rate CU pillar proce... Read More


US Patent Issued to HITHIUM TECH HK on April 7 for "Anode plate for film plating machine and film plating machine" (Chinese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,595,582, issued on April 7, was assigned to HITHIUM TECH HK Ltd. (Kowloon, Hong Kong). "Anode plate for film plating machine and film plating m... Read More


US Patent Issued to Dalian University of Technology, NingBo Inst. of Dalian University of Technology on April 7 for "Method for preparing a P-type ZrCoSb-based half-Heusler single crystal alloy with a chemical composition of ZrCoSb1-xSnx by vertical bridgman directional crystallization" (Chinese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,595,583, issued on April 7, was assigned to Dalian University of Technology (Dalian City, China) and NingBo Inst. of Dalian University of Techno... Read More


US Patent Issued to GlobalWafers on April 7 for "Systems and methods for producing a single crystal silicon ingot using a vaporized dopant" (Missouri Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,595,584, issued on April 7, was assigned to GlobalWafers Co. Ltd. (Hsinchu, Taiwan). "Systems and methods for producing a single crystal silico... Read More


US Patent Issued to SUMCO on April 7 for "Heating part of silicon single crystal manufacturing device, convection pattern control method for silicon melt, silicon single crystal manufacturing method, silicon wafer manufacturing method, silicon single crystal manufacturing device, and convection pattern control system for silicon melt" (Japanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,595,585, issued on April 7, was assigned to SUMCO Corp. (Tokyo). "Heating part of silicon single crystal manufacturing device, convection patte... Read More


US Patent Issued to Winsheng Material Technology on April 7 for "Quality control method for growing silicon carbide crystal" (Taiwanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,595,586, issued on April 7, was assigned to Winsheng Material Technology Co. Ltd. (New Taipei City, Taiwan). "Quality control method for growin... Read More


US Patent Issued to ASM IP Holding on April 7 for "Method and a substrate processing apparatus for forming an epitaxial stack on a plurality of substrates" (Belgian Inventor)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,595,587, issued on April 7, was assigned to ASM IP Holding B.V. (Almere, Netherlands). "Method and a substrate processing apparatus for forming... Read More


US Patent Issued to Sumitomo Chemical on April 7 for "Method for manufacturing nitride semiconductor substrate, nitride semiconductor substrate, and laminate structure" (Japanese Inventor)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,595,588, issued on April 7, was assigned to Sumitomo Chemical Co. Ltd. (Tokyo). "Method for manufacturing nitride semiconductor substrate, nitr... Read More